Virginia Patent of the Month – March 2024

GeneSiC Semiconductor, Inc., a pioneer in Silicon Carbide technology, has been granted a patent for their design of metal-oxide-semiconductor field-effect transistors (MOSFETs) on silicon carbide (SiC) substrates. This innovative MOSFET device marks a significant advancement in powering semiconductor devices, specifically addressing the challenge of mitigating short-channel effects in SiC MOSFETs.

The newly developed MOSFET device features a meticulously engineered unit cell comprising key components such as a source region, a well region, a source attachment region, a gate oxide layer, and a gate metal layer. Notably, the source attachment region plays a crucial role in enhancing the performance and reliability of the device. Positioned in direct contact with the source region, the source attachment region boasts a unique configuration designed to optimize device functionality.

One of the distinguishing features of this invention is the flexibility in the design of the source attachment region. With options for different conductivity type regions, depths, and doping concentrations, GeneSiC offers versatility tailored to diverse application requirements. Whether it’s achieving optimal channel lengths or addressing threshold voltage roll-off effects, the customizable nature of the source attachment region sets this MOSFET device apart from conventional solutions.

Moreover, the fabrication process outlined for this MOSFET device showcases GeneSiC’s commitment to precision and efficiency. Through a series of steps involving ion implantation, mask layers, sidewall spacers, and etching processes, the company demonstrates a meticulous approach to manufacturing semiconductor devices with exceptional performance characteristics.

By introducing this innovative MOSFET device, GeneSiC aims to revolutionize power semiconductor technology, offering solutions that transcend the limitations of conventional devices. With its ability to mitigate short-channel effects and enhance device performance, this invention represents a significant leap forward in the realm of SiC MOSFET technology.

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