Oregon Patent of the Month – August 2023
Inpria Corp was founded as a spin-out from Oregon State University’s Department of Chemistry, after developing a novel suite of EUV metal oxide photoresists. With beginnings so solidly placed in R&D, it’s no surprise that their work continues on this pathway. Recently, the company has patented a radiation-based patterning method.
When developing semiconductor-based devices, materials are usually patterned. This pattern allows the delicate structure to integrate with other components. With Inpria’s radiation-based patterning, a large number of devices can be formed into a small area.
This film, composed of a first material teeming with metal ions enveloped in radiation-sensitive ligands, brings forth a transformation of epic proportions. With a thickness spanning 1 to 40 nm, this film’s encounter with EUV radiation ushers in a new era of precision engineering.
The magic happens when the radiation-sensitive ligands join forces with metal ions. Upon EUV radiation exposure, a dance of bonds breaks forth, altering the very essence of the film. This phenomenon isn’t just limited to a visual spectacle; it orchestrates differential dissolution rates between exposed and unexposed regions. Think of it as a symphony of selective condensation and resistance that paints a vivid contrast between various film zones.
Inpria’s creation paves a new route for the future of semiconductor patterning. With EUV radiation dosages as low as 100 mJ/cm², the film’s differential dissolution comes alive. This innovation surmounts the limitations of its predecessors, capturing intricacies with finesse and precision. Whether it’s the impressive blend of metal ions, the tantalizing dance of ligands, or the promise of high-resolution patterns, Inpria’s mastery is a testament to the limitless horizons of research and development.
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